Publications

Journal papers

  1. K. Stern, N. Wainstein, Y. Keller, C.M. Neumann, E. Pop, S. Kvatinsky, E. Yalon, “Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory,” IEEE Electron Dev. Lett., in press (2021). DOI: 10.1109/LED.2021.3094765.
  2. U. Schmidt, C.S. Bailey, J. Englert, E. Yalon, G. Ankonina, E. Pop, O. Hollricher, T. Dieing, “A Comprehensive Study of WSe2 Crystals Using Correlated Raman, Photoluminescence (PL), Second Harmonic Generation (SHG), and Atomic Force Microscopy (AFM) Imaging,” Spectroscopy 36, 23-30 (2021).
  3. K. Stern, N. Wainstein, Y. Keller, C.M. Neumann, E. Pop, S. Kvatinsky, E. Yalon, “Uncovering Phase Change Memory Energy Limits by Sub-Nanosecond Probing of Power Dissipation Dynamics,” Adv. Electron. Mater., 2100217 (2021).
  4. F. Xiong, E. Yalon, C.J. McClellan, J. Zhang, Ö.B. Aslan, A. Sood, J. Sun, C.M. Andolina, W. Al-Saidi, K.E. Goodson, T.F. Heinz, Y. Cui, E. Pop, “Tuning Electrical and Interfacial Thermal Properties of Bilayer MoS2 via Electrochemical Intercalation,” Nanotechnology 32, 265202 (2021).
  5. N. Wainstein, G. Ankonina, T. Swoboda, M. M. Rojo, S. Kvatinsky, E. Yalon, “Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides”, IEEE Trans. Elec. Dev. 68 (3), 1298-1303 (2021).
  6. C.J. McClellan, E. Yalon, K.K.H. Smithe, S.V. Suryavanshi, E. Pop, “High Current Density in Monolayer MoS2 Doped by AlOx,” ACS Nano 15, 1587-1596 (2021).
  7. N. Wainstein, G. Ankonina, S. Kvatinsky, E. Yalon, “Compact Modeling and Electro-Thermal Measurements of Indirectly-Heated Phase Change RF Switches”, IEEE Trans. Elec. Dev. 67 (11), 5182-5187 (2020).
  8. K. Schauble, D. Zakhidov, E. Yalon, S. Deshmukh, R.W. Grady, K.A. Cooley, C.J. McClellan, S. Vaziri, D. Passarello, S.E. Mohney, A.K. Sood, M.F. Toney, A. Salleo, E. Pop, “Uncovering the Effects of Metal Contacts on Monolayer MoS2,” ACS Nano 14 (11), 14798-14808 (2020).
  9. I. Krylov,  V. Korchnoy, X. Xu, K. Weinfeld, E. Yalon, D. Ritter, and M. Eizenberg, “Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect” J. Appl. Phys. 128, 065301 (2020).
  10. N. Wainstein, G. Adam, E. Yalon, and S. Kvatinsky, “Radiofrequency Switches Based on Emerging Resistive Memory Technologies – A Survey”, Proceedings of the IEEE (in press).
  11. D. Miron, D. Cohen-Azarzar,  N. Segev, M. Baskin, F. Palumbo, E. Yalon, L. Kornblum, “Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces”, J. Appl. Phys. 128, 045306 (2020).
  12. I. Krylov, Y. Qi, V. Korchnoy, K. Weinfeld, M. Eizenberg, and E. Yalon, “Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition.” Appl. Phys. Lett. 117, 041902 (2020).
  13. D. Somvanshi, E. Ber, C.S. Bailey, E. Pop, E. Yalon, “Improved Current Density and Contact Resistance in Bilayer MoSe2 by AlOx Capping,” ACS Appl. Mater. Interfaces. 12, 36355-36361 (2020).
  14. D. Miron, D. Cohen-Azarzar, B. Hoffer, M. Baskin, S. Kvatinsky, E. Yalon, L. Kornblum, “Oxide 2D electron gases as a reservoir of defects for resistive switching”, Appl. Phys. Lett. 116, 223503 (2020).
  15. I. Krylov, Y. Qi, V. Korchnoy, K. Weinfeld, M. Eizenberg, and E. Yalon, “Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition.” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38, 3, 032403 (2020).
  16. I.M. Datye, M. Muñoz Rojo, E. Yalon, S. Deshmukh, M.J. Mleczko, E. Pop, “Localized Heating and Switching in MoTe2-Based Resistive Memory Devices,” Nano Letters, 20, 1461-1467 (2020).
  17. D. Miron, I. Krylov, M. Baskin, E. Yalon, L. Kornblum, “Understanding Leakage Currents through Al2O3 on SrTiO3”, J. Appl. Phys. 126, 185301 (2019).
  18. S. Deshmukh, E. Yalon, F. Lian, K.E. Schauble, F. Xiong, I.V. Karpov, E. Pop, “Temperature-Dependent Contact Resistance to Non-Volatile Memory Materials,” IEEE Trans. Elec. Dev. 66, 3816-3821 (2019).
  19. S. Vaziri, E. Yalon, M. Muñoz Rojo, S.V. Suryavanshi, H. Zhang, C.J. McClellan, C.S. Bailey, K.K.H. Smithe, A.J. Gabourie, V. Chen, S. Deshmukh, L. Bendersky, A.V. Davydov, E. Pop, “Ultrahigh Thermal Isolation Across Heterogeneously Layered Two-Dimensional Materials,” Science Adv. 5, eaax1325 (2019). Covered at Nature News and Phys.org.
  20. X. Jing, X, Y. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza, “Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects,” Adv. Funct. Mater.  1901971 (2019).
  21. K.L. Okabe, A. Sood, E. Yalon, C.M. Neumann, M. Asheghi, E. Pop, K.E. Goodson, H.-S.P. Wong, “Understanding the Switching Mechanism of Interfacial Phase Change Memory,” J. Appl. Phys. 125, 184501 (2019).
  22. C.M. Neumann, K.L. Okabe, E. Yalon, R.W. Grady, H.-S.P. Wong, E. Pop, “Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2,” Appl. Phys. Lett. 114, 082103 (2019).
  23. E. Yalon, I.M. Datye, J.-S. Moon, K.-A. Son, K. Lee, E. Pop, “Energy-Efficient Indirectly-Heated Phase Change RF Switch,” IEEE Electron Dev. Lett. 40, 455-458 (2019).
  24. M. Muñoz Rojo, Z. Li, C. Sievers, A. Bornstein, E. Yalon, S. Deshmukh, S. Vaziri, M.-H. Bae, F. Xiong, D. Donadio, E. Pop, “Thermal Transport Across Graphene Step Junctions”, 2D Materials 6, 011005 (2019).
  25. M. Lanza, H.-S. P. Wong, E. Pop, D. Ielmini, D. Strukov, […], E. Yalon, […], “Recommended methods to study resistive switching devices”, Advanced Electronic Materials, 1800143 (2018).
  26. Z. Lin, Y. Lei, S. Subramanian, N. Briggs, […], E. Yalon, […], E. Pop, V. H. Crespi, J. A. Robinson, and M. Terrones, “Recent progresses on 2D materials beyond graphene: From Ripples, Defects, Intercalation, and Valley Dynamics, to Straintronics, Power dissipaters and Borophene”, APL Materials 6, 080701 (2018).
  27. K. K. H. Smithe, A. V. Krayev, C. S. Bailey, H. R. Lee, E. Yalon, Ö. B. Aslan, M. Muñoz Rojo, S. Krylyuk, P. Taheri, A. V. Davydov, T. F. Heinz, and E. Pop, “Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy”, ACS Appl. Nano Mater., DOI:10.1021/acsanm.7b00083 (2017).
  28. E. Yalon, O. B. Aslan, K. K. H. Smithe, C. J. McClellan, F. Xiong, A. Sood, C. M. Neumann, K. E. Goodson, T. F. Heinz, and E. Pop, “Temperature Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry”, ACS Applied Materials and Interfaces 9, 43013-43020 (2017).
  29. S. W. Fong, C. M. Neumann, E. Yalon, M. M. Rojo, E. Pop, and H.-S. P. Wong, “Dual-Layer Dielectric Stack for Thermally-isolated Low-energy Phase-change Memory”, IEEE Transactions on Electron Devices 64, 4496-4502 (2017).
  30. E. Yalon, S. Deshmukh, M. M. Rojo, F. Lian, C. M. Neumann, F. Xiong, and E. Pop, “Spatially Resolved Thermometry of Resistive Memory Devices”, Scientific Reports 7, 15360 (2017).
  31. L. Cai, C. J. McClellan, A. L. Koh, H. Li, E. Yalon, E. Pop, X. Zheng, “Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2”, Nano Letters 17, 3854-3861 (2017).
  32. L. Gao, E. Yalon, A. R. Chew, S. Deshmukh, A. Salleo, E. Pop and A. A. Demkov, “Effect of oxygen vacancies and strain on the phonon spectrum of thin HfO2 films”, Journal of Applied Physics 121, 224101 (2017).
  33. E. Yalon, C. J. McClellan, K. K. H. Smithe, R. Xu, M. Muñoz Rojo, S. V. Suryavanshi, A. J. Gabourie, C. M. Neumann, F. Xiong, and E. Pop, “Energy Dissipation in Monolayer MoS2 Electronics”, Nano Letters 17, 3429–3433 (2017).
  34. E. Yalon, A. Gavrilov, S. Cohen, and D. Ritter, “Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices”, IEEE Transactions on Electron Device 62, 3671-3677 (2015).
  35. E. Yalon, A. A. Sharma, M. Skowronski, J. A. Bain, D. Ritter, and I. Karpov, “Thermometry of filamentary RRAM devices”, IEEE Transactions on Electron Device 62, 2972-2977 (2015).
  36. S. Recher, E. Yalon, D. Ritter, I. Riess, and S. Salzman, “Dual bipolar resistive switching in the sub-forming regime of HfO2 RRAM devices”, Solid State Electronics 111, 238-242 (2015).
  37. E. Yalon, I Karpov, V Karpov, I Riess, D Kalaev, and D Ritter, “Detection of the insulating gap and conductive filament growth direction in resistive memories”, Nanoscale 7, 15434–15441 (2015).
  38. D. Kalaev, E. Yalon and I. Riess, “On the direction of the conductive filament growth in valence change memory devices during electroforming”, Solid State Ionics 276, 9-17 (2015).
  39. V. G. Karpov, R.E.E Maltby, I.V. Karpov, and E. Yalon, “Field-Induced Nucleation in the Presence of a Metal Electrode”, Physical Review Applied 3, 044004 (2015).
  40. Y. Calahorra, E. Yalon and D. Ritter, “On the diameter dependence of metal-nanowire Schottky barrier”, Journal of Applied Physics 117 (3), 034308 (2015).
  41. S. Mehari, E. Yalon, A. Gavrilov, D. Mistele,  G. Bahir, M. Eizenberg, and D. Ritter, “Comparison of Simulations and Measurements of Gate Leakage Currents in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors”, IEEE Transactions on Electron Device 61, 3558-3561 (2014).
  42. E. Yalon, I. Riess, and D. Ritter, “Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results”, IEEE Transactions on Electron Device 61, 1137-1144 (2014).
  43. E. Yalon, S. Cohen, A. Gavrilov and D. Ritter, “Evaluation of the local temperature of conductive filaments in resistive switching materials,” Nanotechnology 23, 465201 (2012).
  44. E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, and D. Ritter, “Resistive Switching in HfO2 probed by a Metal Insulator Semiconductor Bipolar Transistor”, IEEE Electron Device Letters 33, 11-13 (2012).
  45. E. Yalon, D. Cohen Elias, A. Gavrilov, S. Cohen, R. Halevy, and D. Ritter, “A Degenerately Doped In0.53Ga0.47As Bipolar Junction Transistor,” IEEE Electron Device Letters 32, 21-23 (2011).

Refereed Conference Proceedings and Abstracts

  1. K. Stern, Y. Keller, C. M. Neumann, E. Pop, and E. Yalon, “Temperature-Dependent Reset Power Consumption in Phase Change Memory”, European Phase-Change and Ovonic Symposium (E\PCOS 2021 ), Sep. 2021.
  2. E. Ber, R. W. Grady, E. Pop, and E. Yalon, “Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors”, IEEE Device Research Conference (DRC), June 2021.
  3. K. Stern, N. Wainstein, Y. Keller, C. M. Neumann, E. Pop, S. Kvatinsky, and E. Yalon, “Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices”, IEEE Device Research Conference (DRC), June 2021. Best poster award.
  4. N. Wainstein, G. Ankonina, S. Kvatinsky, E. Yalon, “Electrothermal Compact Modeling of Indirectly Heated Phase Change RF Switches”, IEEE Device Research Conference (DRC), June 2020, late news.
  5. N. Wainstein, G. Ankonina, S. Kvatinsky, E. Yalon, “Nanosecond Probing of Phase Transition Properties in Chalcogenides using Embedded Heater-Thermometer”, MRS Spring Meeting 2020.
  6. E. Yalon “Energy Efficiency of Phase Change Reset Programming “, IEEE Non-Volatile Memory Technol. Symp. (NVMTS), Oct. 2019.
  7. N. Wainstein, T. Tsabari, Y. Goldin, E. Yalon and S. Kvatinsky, “A Dual-Band CMOS Low-Noise Amplifier using Memristor-Based Tunable Inductors,” Proceedings of the IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2019.
  8. J. Moon, H.-C. Seo, K. K. Son, E. Yalon, K. Lee, E. Flores, G. Candia, and E. Pop, “Reconfigurable Infrared Spectral Imaging with Robust Phase Change Materials”, SPIE, Apr. 2019.
  9. S. Vaziri, E. Yalon, M. Muñoz Rojo, S. V. Suryavanashi, C. J. McClellan, C. S. Bailey, A. J. Gabourie, V. Chen, S. Deshmukh, K. K. H. Smithe, and E. Pop, “Layer-by-layer Temperature Probing Across 2D van der Waals Heterostructures”, MRS Fall Meeting 2018.
  10. S. Deshmukh, R. Islam, C. Saltonstall, E. Yalon, T. Beechem, K. Saraswat, and E. Pop, “Tuning Thermal and Electrical Properties of NiOx Films by UV/O3 Treatment for Resistive Memory Applications”, MRS Fall Meeting 2018.
  11. E. Yalon, K. Okabe, C. M. Neumann, H.-S. P., Wong, and E. Pop, “Improving PCM Energy-Efficiency by Reducing Pulse Widths”, European Symposium on Phase Change and Ovonic Sciences (E/PCOS), Sep. 2018.
  12. E. Yalon, S. Deshmukh, I. M. Datye, S. Bohaichuk, C. M. Neumann1, and E. Pop, “Thermometry, Interfaces, Scaling and Energy Limits of Phase-Change Memory”, European Symposium on Phase Change and Ovonic Sciences (E/PCOS), Sep. 2018.
  13. K. Okabe, A. Sood, E. Yalon, C. M. Neumann, E. Pop, M. Asheghi, K. E. Goodson, H.-S. P. Wong, “Electrical and Thermal Analysis of Interfacial Phase Change Memory”, European Symposium on Phase Change and Ovonic Sciences (E/PCOS), Sep. 2018.
  14. K. Schauble, E. Yalon, D. Zakhidov, S. Deshmukh, C.J. McClellan, S. Vaziri, A.K. Sood, A. Salleo, E. Pop, “Interfacial Reactions and Doping Effects at Metal Contacts to Monolayer MoS2,” Electronic Materials Conference (EMC), June 2018, late news.
  15. E. Yalon, K. Okabe, C. M. Neumann, H.-S. P. Wong, and E. Pop, “Energy-Efficient Phase Change Memory Programming by Nanosecond Pulses”, IEEE Device Research Conference (DRC), June 2018.
  16. C. J. McClellan, E. Yalon, L. Cai, S. Suryavanshi, X. Zheng, and E. Pop, “Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors”, IEEE Device Research Conference (DRC), June 2018.
  17. S. Deshmukh, M. M. Rojo, E. Yalon, S. Vaziri, and E. Pop, “Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry”, IEEE Device Research Conference (DRC), June 2018.
  18. I. Datye, M. M. Rojo, E. Yalon, M. J. Mleczko, and E. Pop, “Localized Heating in MoTe2-Based Resistive Memory Devices”, IEEE Device Research Conference (DRC), June 2018.
  19. E. Yalon and E. Pop, “Spatially Resolved Thermometry of PCM Devices“, IEEE Non-Volatile Memory Technol. Symp. (NVMTS), Aug. 2017.
  20. E. Pop, E. Yalon, M. Munoz Rojo, M. Mleczko, C. English, N. Wang, K. Smithe, S. Suryavanshi, I. Datye, C. McClellan, A. Gabourie, “Electronic, Thermal, and Unconventional Applications of 2D Materials”, IEEE International Conference on Nanotechnology, Aug. 2017, Pittsburg, PA.
  21. S. Deshmukh, F. Lian, E. Yalon, G. Pitner, H. -S. P. Wong, E. Pop, “Sub-15 nm Nanowires Enabled by Cryo Pulsed Self-Aligned Nanotrench Ablation on Carbon Nanotubes”, IEEE International Conference on Nanotechnology, Aug. 2017.
  22. S. V. Suryavanshi, A. J. Gabourie, A. B. Farimani, E. Yalon, E. Pop, “Thermal Boundary Conductance of the MoS2-SiO2 Interface”, IEEE International Conference on Nanotechnology, Aug. 2017.
  23. C. J. McClellan, E. Yalon, K.K.H. Smithe, S.V. Suryavanshi, E. Pop, “Effective n-type Doping of Monolayer MoS2 by AlOx,” IEEE Device Research Conference (DRC), Jun 2017.
  24. E. Yalon, M. Munoz-Rojo, Z. Li, R.L. Xu, A. Gabourie, S. Suryavanshi, and Eric Pop, “Thermal Transport in Two-Dimensional Materials and Devices”, MRS Spring Meeting 2017.
  25. C. J. McClellan, L. Cai, E. Yalon, X. Zheng, and Eric Pop, “Record Current Density in Monolayer p-type WSe2 with Ultrathin MoO3 Hole Doping Layers”, MRS Spring Meeting 2017.
  26. F. Xiong, E. Yalon, C. J. McClellan, A. Sood, J. Zhang, J. Sun, K. E. Goodson, Y. Cui, and Eric Pop, “Probing electrical and thermal properties in electrochemically Li-intercalated MoS2 nanosheets with Raman spectroscopy”, MRS Spring Meeting 2017.
  27. E. Yalon, K. K. H. Smithe, O. B. Aslan, C. J. McClellan, F. Xiong, Y. C. Shin, A. Sood, S. V. Suryavanshi, A. J. Gabourie, R. Xu, C. M. Neumann, K. E. Goodson, T. F. Heinz and E. Pop, “Thermal Boundary Conductance between Monolayer MoS2 and SiO2 via In-Situ Raman Spectroscopy of Functioning MoS2 Transistors”. MRS Spring Meeting 2017.
  28. F. Xiong, E. Yalon, A. Behnam, C.M. Neumann, K.L. Grosse, S. Deshmukh, and E. Pop, “Towards Ultimate Scaling Limits of Phase-Change Memory”, IEEE Int. Elec. Dev. Meeting (IEDM), Dec. 2016.
  29. E. Yalon, C. J. McClellan, K. K. H. Smithe, Y. C. Shin, R. Xu, and E. Pop, “Direct Observation of Power Dissipation in Monolayer MoS2 Devices”, IEEE 74th Annu. Device Research Conf. June 2016, late news.
  30. S. Deshmukh, R. Islam, C. Chen, E. Yalon, K.C. Saraswat, and E. Pop, “Thermal modeling of metal oxides for highly scaled nanoscale RRAM”, IEEE Simulation of Semiconductor Processes and Devices (SISPAD), Sep. 2015.
  31. E. Yalon, D. Kalaev, A. Gavrilov, S. Cohen, I. Riess, and D. Ritter, “Detection of the conductive filament growth direction in resistive memories”, IEEE 72nd Annu. Device Research Conf. June 2014, late news.
  32. E. Yalon, I. Riess, and D. Ritter, “Heat Dissipation Mechanisms in Resistive Switching Devices”, in Proc. IEEE NVM Technol. Symp., Aug. 2013.
  33. E. Yalon, A. Gavrilov, S. Cohen, and D. Ritter, “Validation and Extension of the Temperature Extraction Method of Conductive Filaments in Resistive Switching Materials,” IEEE 71st Annu. Device Research Conf., June 2013.
  34. E. Yalon and D. Ritter, “Metal-insulator-semiconductor bipolar transistor as a 4F2 vertical RRAM selection device,” in Proc. IEEE NVM Technol. Symp., Oct.-Nov. 2012.
  35. E. Yalon, S. Cohen, A. Gavrilov, B. Meyler, J. Salzman, and D. Ritter, “Experimental Evaluation of the Temperature in Conductive Filaments Created in Resistive Switching Materials”, Nature Conference, Frontiers in Electronic Materials: Correlation Effects and Memristive Phenomena, June 2012.
  36. E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, V. Mikhelashvili B. Meyler, J. Salzman, and D. Ritter, “Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces,” ECS Trans. 41, 325-334, Oct. 2011.
  37. E. Yalon, D. Cohen Elias, A. Gavrilov, S. Cohen, R. Halevy, and D. Ritter, “An InGaAs Bipolar Junction Transistor having Degenerately Doped Base and Emitter Layers,” IEEE 68th Annu. Device Research Conf., June 2010, late news.

Invited Talks

  • E. Yalon “Energy Efficiency of Phase Change Reset Programming “, IEEE Non-Volatile Memory Technol. Symp. (NVMTS), Oct. 2019
  • E. Yalon and E. Pop, “Spatially Resolved Thermometry of PCM Devices“, IEEE Non-Volatile Memory Technol. Symp. (NVMTS), Aug. 2017.
  • E. Yalon, “Energy Dissipation in 2D Electronic Devices”, Graphene and Beyond 5th annual workshop, May 2017.
  • E. Yalon, D. Ritter, “Study of the Resistive Switching Effect using a Three Terminal Bipolar Device”, CIMTEC, June 2016.
  • E. Yalon, D. Ritter, “Study of the Resistive Switching Effect using a Three Terminal Bipolar Device”, SRC Review Meeting, Sept. 2015.
  • E. Yalon, I. Riess, and D. Ritter, “Heat Dissipation Mechanisms in Resistive Switching Devices”, in Proc. IEEE NVM Technol. Symp., Aug. 2013.