Emanuel Ber

Emanuel is Ph.D. student at the Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion – Israel Institute of Technology. He received his B.Sc. degree in Material Engineering and Chemistry in 2016 from the Technion, and his M.Sc. in Nanoscience and Nanotechnology in 2019 from the Technion as well. During his M.Sc. studies he characterized interface traps in GaN devices using UV assisted gated van der Pauw measurements, and Sentaurus TCAD. His current work is on doping of 2D semiconductors.