RF switches with resistive memory devices

High-performance RF switches are important building blocks for reconfigurable radios, where connections between the different blocks are switched to provide services for distinct frequency bands. Resistive memory technologies, such as redox and conductive-bridge RAM (ReRAM, CBRAM), and phase change materials (PCM) are being extensively studied for non-volatile memory applications but have recently been proposed for RF switches. These devices show promising RF figure of merit, non-volatility, fast and low-energy switching and compatibility with back-end-of-the-line (BEOL) of standard CMOS process.

Collaboration with Prof. Shahar Kvatinsky, Technion EE.